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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220F) and symbol ANG INCH Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM E Open base CONDITIONS OND IC TOR UC VALUE -110 -100 -6 -3 -5 UNIT V V V A A Open emitter Open collector TC=25ae PC Collector dissipation 20 W 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE= IC=-1.5A ; IB=-3mA IC=-1.5A ; IB=-3mA VCB=-80V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-3V IC=-1.5A ; VCE=-5V 1500 MIN -110 -100 2SB1226 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.0 -1.5 -2.0 -0.1 -3.0 V V mA mA 4000 20 MHz Switching times ton ts tf Turn-on time SEM E Storage time Fall time ANG INCH IC=500IB1=-500IB2=-1A VCC=-50V ,RL=50| OND IC TOR UC 0.7 |I 2.4 1.2 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1226 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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